Growth mechanism and properties of InGaN insertions in GaN nanowires-Reference-Cited by-同舟云学术

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Growth mechanism and properties of InGaN insertions in GaN nanowires

Published:2012-03-14 Issue:13 Volume:23 Page:135703
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Tourbot G,Bougerol C,Glas F,Zagonel L F,Mahfoud Z,Meuret S,Gilet P,Kociak M,Gayral B,Daudin B

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/23/i=13/a=135703/pdf

Reference32 articles.

1. Equilibrium limits of coherency in strained nanowire heterostructures

2. Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires

3. Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE

4. InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

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