Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device-Reference-Cited by-同舟云学术

Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

Published:2011-05-16 Issue:25 Volume:22 Page:254023
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Seo Kyungah,Kim Insung,Jung Seungjae,Jo Minseok,Park Sangsu,Park Jubong,Shin Jungho,Biju Kuyyadi P,Kong Jaemin,Lee Kwanghee,Lee Byounghun,Hwang Hyunsang

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/22/i=25/a=254023/pdf

Reference26 articles.

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3. A VLSI Array of Low-Power Spiking Neurons and Bistable Synapses With Spike-Timing Dependent Plasticity

4. Nanoscale Memristor Device as Synapse in Neuromorphic Systems

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