Spatially indirect excitons in self-assembled Ge/Si quantum dots-Reference-Cited by-同舟云学术

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Spatially indirect excitons in self-assembled Ge/Si quantum dots

Published:2001-11-28 Issue:4 Volume:12 Page:441-446
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Yakimov A I,Dvurechenskii A V,Stepina N P,Nenashev A V,Nikiforov A I

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/12/i=4/a=311/pdf

Reference24 articles.

1. Exciton-exciton interactions in highly excited quantum dots in a magnetic field

2. Exciton droplets in zero dimensional systems in a magnetic field

3. Exciton complexes inInxGa1−xAs/GaAsquantum dots

4. Excitonic artificial atoms in a quantum dot

5. Photoluminescence of charged InAs self-assembled quantum dots

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1. Enhancement the intensity of optical transitions in the germanium/silicon nanosystem with germanium quantum dots;Physica B: Condensed Matter;2021-09

2. Intensity of Radiative Recombination in the Germanium/Silicon Nanosystem with Germanium Quantum Dots;Crystals;2021-03-11

3. Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures;Physical Review B;2019-03-22

4. Spin relaxation in inhomogeneous quantum dot arrays studied by electron spin resonance;Physical Review B;2014-01-16

5. Electron localization in Ge/Si heterostructures with double quantum dots detected by an electron spin resonance method;Physical Review B;2013-12-12

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