Effects of sapphire nitridation and growth temperature on the epitaxial growth of hexagonal boron nitride on sapphire-Reference-Cited by-同舟云学术

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Effects of sapphire nitridation and growth temperature on the epitaxial growth of hexagonal boron nitride on sapphire

Published:2017-01-24 Issue:1 Volume:4 Page:015007
ISSN:2053-1591
Container-title:Materials Research Express
language:
Short-container-title:Mater. Res. Express

Author:

Ahmed Kawser,Dahal Rajendra,Weltz Adam,Lu James J-Q,Danon Yaron,Bhat Ishwara B

Funder

US Department of Homeland Security, Domestic Nuclear Detection Office

Publisher

IOP Publishing

Subject

Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/2053-1591/4/i=1/a=015007/pdf

Reference26 articles.

1. Hexagonal boron nitride epitaxial layers as neutron detector materials

2. Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products

3. A systematic study of the atmospheric pressure growth of large-area hexagonal crystalline boron nitride film

4. Boron nitride substrates for high mobility chemical vapor deposited graphene

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1. Exploring Gas-Phase Chemical Reactions in NH₃/B₂H₆ Systems for Chemical Vapor Deposition Using Reactive Molecular Dynamics;The Journal of Physical Chemistry A;2024-03-26

2. A review on transfer methods of two-dimensional materials;2D Materials;2024-03-15

3. Adsorption, dissociation, and diffusion of borazine on Pt(111);Surfaces and Interfaces;2023-12

4. Scalable High-Mobility Graphene/hBN Heterostructures;ACS Applied Materials & Interfaces;2023-07-31

5. Epitaxial hexagonal boron nitride with high quantum efficiency;APL Materials;2023-05-01

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