Abstract
Abstract
Non-volatile resistive random-access memory (RRAM) is being promoted as a possible alternative to flash memory, however the optimal material system and sophisticated fabrication techniques hinder its utilization in practical routes. Here, we demonstrate the direct fabrication of metal/oxides/semiconductor (MOS) structured Ag/VO2(B)/SiOx/n++Si RRAM via drop-coating process, in which bipolar resistive switching behavior was obtained and investigated systematically. The RRAM devices exhibit good cycle-to-cycle endurance (>30 cycles) and high on/off ratio (>60). The switching mechanism is proposed to form Ag conducting filaments via VO2(B) nanorods’ guide by comparing the resistive switching behavior of Ag/SiOx/n++Si, Ag/VO2(B)/n++Si, Ag/VO2(B)/SiOx/n++Si devices and the corresponding SEM images before and after the application of electric field, which is confirmed by introducing NaCl barrier layer in Ag/VO2(B)-NaCl/SiOx/n++Si devices. The present study may pave a convenient route for fabricating the ultrahigh density resistive memory devices without the aid of complex fabrication techniques, as well as provide a new potential material system for RRAM.
Funder
the NSFCNRF Scientific Cooperation Program, Brain Pool Program of Korea
National Natural Science Foundation of China
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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