Enhanced transmission performance based on ultrathin broadband circular hole array metasurface

Abstract

Abstract A high transmittance broadband metasurface with Si and STO layers is verified in 100–130 THz. This metasurface achieves a transmission peak (Amplitude 78.1%, Resonance frequency 112.2 THz) with a complete Si layer, or a broad transmission band (Average transmittance 82.3%, bandwidth 5.1 THz) with a Si layer defined by a circular hole array. The influence of structural parameters (period P and diameter D) on this transmission band is measured. In the first set of measurements, the average transmittance and bandwidth of this metasurface remain unchanged with P increasing. In the second set of measurements, however, the average transmittance is increased from 82.3% to 92.7%, and bandwidth is enhanced from 5.1 THz to 7.2 THz with D increasing. Finally, the sensitivity of the metasurface to temperature is measured. When temperature increases from 300 K to 360 K, average transmittance increases from 82.3% to 95.4%, and bandwidth enhances from 5.1 THz to 10.3 THz. When temperature reduces, the average transmittance and bandwidth decrease. This metasurface exploits the potential of temperature sensing.