Properties of Excitons Bound to Neutral Donors in GaAs Quantum-Well Wires
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference19 articles.
1. Experimental Proof of the Existence of a New Electronic Complex in Silicon
2. Binding of an Exciton to a Neutral Acceptor
3. Radiative decay of the bound exciton in direct-gap semiconductors: The correlation effect
4. Quantum Monte Carlo studies of binding energy and radiative lifetime of bound excitons in direct-gap semiconductors
5. Light amplification related to collective atomic recoil affected by dipole–dipole collision
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ionized Acceptor Bound Exciton States in Wurtzite GaN/Al x Ga 1− x N Cylindrical Quantum Dot;Communications in Theoretical Physics;2012-01
2. Exciton bound to a neutral donor in a parabolic quantum-well wire;Journal of Applied Physics;2009-09
3. Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots: Strong Built-in Electric Field Effects;Chinese Physics Letters;2006-07-21
4. Properties of Excitons Bound to Neutral Donors in GaAs-Al x Ga 1− x As Quantum-Well Wires;Communications in Theoretical Physics;2006-05
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