Degradation of Ultra-Thin Gate Oxide NMOSFETs under CVDT and SHE Stresses
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/25/11/074/pdf
Reference13 articles.
1. SILC during NBTI Stress in PMOSFETs with Ultra-Thin SiON Gate Dielectrics
2. Mechanism for stress‐induced leakage currents in thin silicon dioxide films
3. On the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics
4. SILC as a measure of trap generation and predictor of T/sub BD/ in ultrathin oxides
5. Monitoring the degradation that causes the breakdown of ultrathin (<5 nm) SiO2 gate oxides
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes;Chinese Physics Letters;2018-07
2. Gate leakage current of NMOSFET with ultra-thin gate oxide;Journal of Central South University;2012-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3