Correlation between Displacement Damage Dose and Proton Irradiation Effects on GaInP/GaAs/Ge Space Solar Cells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/26/2/026102/pdf
Reference14 articles.
1. Super-high-efficiency multi-junction solar cells
2. Application of displacement damage dose analysis to low-energy protons on silicon devices
3. Effects of 0.28–2.80MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use
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1. Radiation effects in GaInP/GaAs/Ge triple junction solar cells irradiated by 1 MeV and 10 MeV electrons;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2021-12
2. Feasibility study of a proton fluence monitor for LEO-Nanosatellite missions based on displacement damage induced in GaAs-LED;Journal of Instrumentation;2019-10-21
3. Supersaturating Silicon with Titanium by Continuous-Wave Laser Irradiation of Sputtered Titanium Film on Silicon;Chinese Physics Letters;2016-02
4. H− ion implantation induced ten-fold increase of photoluminescence efficiency in single layer InAs/GaAs quantum dots;Journal of Luminescence;2014-09
5. Effects of 1.0–11.5 MeV Electron Irradiation on GaInP/GaAs/Ge Triple-junction Solar Cells for Space Applications;Chinese Physics Letters;2014-08
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