Influence of Al Preflow Time on Surface Morphology and Quality of AlN and GaN on Si (111) Grown by MOCVD *
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/34/5/058101/pdf
Reference19 articles.
1. A review of GaN-based optoelectronic devices on silicon substrate
2. Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers
3. Recent advances in GaN transistors for future emerging applications
4. AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
5. Epitaxy of GaN LEDs on large substrates: Si or sapphire?
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1. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25
2. Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si;Chinese Physics B;2023-01-01
3. Influence of Al pre-deposition time on AlGaN/GaN heterostructures grown on sapphire substrate by metal organic chemical vapor deposition;Journal of Materials Science: Materials in Electronics;2020-07-25
4. Simulation and Optimization of Temperature Field in Large-Sized MOCVD Reactor by Resistance Heating;IOP Conference Series: Materials Science and Engineering;2019-05-01
5. Influence of the growth conditions of LT-AlN on quality of HT-AlN growth on Si (1 1 1) by metalorganic chemical vapor deposition;Journal of Crystal Growth;2019-02
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