Impact of Native Defects in the High Dielectric Constant Oxide HfSiO 4 on MOS Device Performance
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/33/1/016101/pdf
Reference29 articles.
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4. Crystal structure of Si-doped HfO2
5. Addendum to “Phase selection and transition in Hf-rich hafnia-titania nanolaminates” (on SiO2) [J. Appl. Phys. 109, 123523 (2011)]: Hafnon formation
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