Ultraviolet Phototransistors on AlGaN/GaN Heterostructures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/24/9/068/pdf
Reference12 articles.
1. AlGaN/GaN HEMTs with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization
2. Growth of crack-free, carbon-doped GaN and AlGaN∕GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy
3. High quantum efficiency AlGaN solar-blind p-i-n photodiodes
4. High quantum efficiency AlGaN solar-blind p-i-n photodiodes
5. Avalanche multiplication in AlGaN based solar-blind photodetectors
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1. Recent advances and prospects for a GaN-based hybrid type ultraviolet photodetector;Semiconductor Science and Technology;2024-06-20
2. Recessed AlGaN/GaN UV Phototransistor;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2019-04-30
3. Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE;Chinese Physics Letters;2009-09
4. Nitride-Based MSM Photodetectors with a HEMT Structure and a Low-Temperature AlGaN Intermediate Layer;Journal of The Electrochemical Society;2008
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