Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/33/10/108104/pdf
Reference19 articles.
1. Trapping effects and microwave power performance in AlGaN/GaN HEMTs
2. An insulator-lined silicon substrate-via technology with high aspect ratio
3. Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire
4. Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition
5. High power pure-blue semiconductor lasers
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1. High quality heavy Sn doping β‑Ga2O3 film with high mobility grown by time division transport Metal Organic Chemical Vapor Deposition;Journal of Alloys and Compounds;2024-10
2. Optimization quality for indium pulse-assisted of β-Ga2O3 thin film on sapphire surface;Ceramics International;2023-12
3. Influence of O2 pulse on the β-Ga2O3 films deposited by pulsed MOCVD;Ceramics International;2021-12
4. Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si;Journal of Applied Physics;2019-06-14
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