High-Mobility P-Type MOSFETs with Integrated Strained-Si 0.73 Ge 0.27 Channels and High-κ/Metal Gates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/33/11/118502/pdf
Reference23 articles.
1. High hole mobilities in fully-strained Si/sub 1-x/Ge/sub x/ layers (0.3>x>0.4) and their significance for SiGe pMOSFET performance
2. High-mobility strained SiGe-on-insulator pMOSFETs with Ge-rich surface channels fabricated by local condensation technique
3. Detailed Simulation Study of a Reverse Embedded-SiGe Strained-Silicon MOSFET
4. Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs
5. Influence of substrate composition and crystallographic orientation on the band structure of pseudomorphic Si-Ge alloy films
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