Highly Sensitive Mid-Infrared Photodetector Enabled by Plasmonic Hot Carriers in the First Atmospheric Window

Abstract

The first atmospheric window of 3–5 μm in the mid-infrared (MIR) spectral range pertains to crucial application fields, with particular scientific and technological importance. However, conventional narrow-bandgap semiconductors operating at this band, represented by mercury cadmium telluride and indium antimonide, suffer from limited specific detectivity at room temperature and hindered optoelectronic integration. In this study, a plasmonic hot electron-empowered MIR photodetector based on Al-doped ZnO (AZO)/bi-layer graphene heterostructure is demonstrated. Free electrons oscillate coherently in AZO disk arrays, resulting in strong localized surface plasmon resonance (LSPR) in the MIR region. The photoelectric conversion efficiency at 3–5 μm is significantly improved due to plasmon-induced hot-electron extraction and LSPR-enhanced light absorption. The specific detectivity reaches about 1.4 × 1011 Jones and responsivity is up to 4712.3 A/W at wavelength of 3 μm at room temperature. The device’s specific detectivity is among the highest performance of commercial state-of-the-art photodetectors and superior to most of the other 2D materials based photodetectors in the MIR region. These results demonstrate that a plasmonic heavily doped metal oxides/2D material heterostructure is a suitable architecture for constructing highly sensitive room-temperature MIR photodetectors.