Ionizing Dose Effect of Thermal Oxides Implanted with Si + Ions-Reference-Cited by-同舟云学术

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Ionizing Dose Effect of Thermal Oxides Implanted with Si + Ions

Published:2007-06 Issue:6 Volume:24 Page:1775-1777
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Ming Chen,Hong-Wei Luo,Zheng-Xuan Zhang,En-Xia Zhang,Hui Yang,Hao Tian,Ru Wang,Wen-Jie Yu

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/24/6/094/pdf

Reference12 articles.

1. Radiation effects and hardening of MOS technology: devices and circuits

2. Hole and electron trapping in ion implanted thermal oxides and SIMOX

3. Electron and hole trapping in thermal oxides that have been ion implanted

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