Growth of Semi-Insulating GaN by Using Two-Step AlN Buffer Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/24/6/058/pdf
Reference29 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. High-resistivity GaN buffer templates and their optimization for GaN-based HFETs
3. Pressure Induced Deep Gap State of Oxygen in GaN
4. Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
5. Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN–GaN HEMT-like structures
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1. Interfacial engineering for semi-insulating GaN/sapphire template with low dislocation density;Journal of Alloys and Compounds;2022-04
2. Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD;Journal of Materials Science: Materials in Electronics;2016-10-31
3. Fabrication and characterization of an AlGaN/PZT detector;Journal of Semiconductors;2010-12
4. GaN grown on AlN/sapphire templates;Acta Physica Sinica;2010
5. Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction;Journal of Materials Science: Materials in Electronics;2009-04-18
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