Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN-Reference-Cited by-同舟云学术

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Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN

Published:2012-01 Issue:1 Volume:29 Page:017301
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Zeng Chang,Zhang Shu-Ming,Wang Hui,Liu Jian-Ping,Wang Huai-Bing,Li Zeng-Cheng,Feng Mei-Xin,Zhao De-Gang,Liu Zong-Shun,Jiang De-Sheng,Yang Hui

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/29/1/017301/pdf

Reference8 articles.

1. Electrical characteristics of contacts to thin film N-polar n-type GaN

2. Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n‐GaN

3. High temperature characteristics of Ti/Al and Cr/Al ohmic contacts to n-type GaN

4. Nonalloyed Cr∕Au-based Ohmic contacts to n-GaN

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low‐Resistivity Ti/Al/TiN/Au Ohmic Contacts to Ga‐ and N‐Face n‐GaN for Vertical Power Devices;physica status solidi (a);2024-04-17

2. Fabrication of vertical AlGaN-based deep-ultraviolet light-emitting diodes operating at high current density (∼43 kA cm⁻²) using a laser liftoff method;Applied Physics Express;2022-03-28

3. Optimization of p-GaP reflective electrode for vertical LED;Results in Physics;2021-11

4. Ohmic Contacts to Gallium Nitride-Based Structures;Semiconductors;2020-03

5. The thermal stability of nonalloyed ohmic contacts to AlGaN/GaN heterostructures;Technical Physics Letters;2017-11

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