Abstract
By generalizing the equation of state of the conduction electron gas in a semiconductor to include a dependence not only on electron density but also on the density gradient we show that the standard diffusion‐drift description can be extended to describe much of the quantum mechanical behavior exhibited by strong inversion layers.
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computational Theory and Mathematics,Computer Science Applications
Cited by
34 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献