Study on microstructures of As+ implanted Ti-Si bilayers with micro-micro beam technique

Abstract

A basic understanding of structures of Ti silicide—Si bilayers formed by ion implantation is of considerable interest because of the increasing application of MOS in VLSI. The aim of the present investigation is to explore the effect of ion implanting conditions on structures in Ti-Si bilayers. Rubloff et al. and Holloway et al. have studied Ti—Si interfaces and suggested that two processes may occur at Ti-Si interfaces, a reaction process other than silicide formation and a grain boundary diffusion process leading to localized silicide formation in the grain boundaries. The reaction processes in Ti—Si bilayers implanted by As+ ions were investigated in this work. An analytical electron microscope (JEOL 2000FX - LINK SYSTEM) with micro—micro beam (MMB) technique was employed.66nm Ti films were deposited onto P type <100> orientated Si substrates with a sputtering system at room temperature and the Ti-Si bilayers were implanted with 250 and 300 KeV and 1016 As+/cm2 respectively.