Author:
Ahmed Abdul-Rahman,Lee Dong-Hyun,Yeom Kyung-Whan
Abstract
In this paper, we demonstrate the successful implementation of an onwafer noise parameters test set that employs an extended six-port network and a conventional noise figure analyzer. The necessary formulation that enables the calibration of the noise parameter test set as well as extraction of the noise wave correlation matrix of a two-port device under test (DUT) was tested for coaxial connector-type DUT measurement in an earlier work but not for onwafer-type DUT. Furthermore, we demonstrate the performance of this technique against data obtained from the well-known tuner method. Measurement carried out for very low-noise figure (2 dB) onwafer-type amplifier demonstrates the capability of our technique. The measured noise parameters show fluctuations in minimum noise figure, NFminof ±0.1 dB, and in noise resistance Rnof about 2%. This test set is simple and fast leading to tremendous time- and cost-savings as well as a simplified procedure in onwafer noise parameters measurements.
Publisher
Cambridge University Press (CUP)
Subject
Electrical and Electronic Engineering
Reference27 articles.
1. An Extraction of Two-Port Noise Parameters From Measured Noise Powers Using an Extended Six-Port Network
2. Measurement of on-wafer transistor noise parameters without a tuner using unrestricted noise sources;Lázaro;Microw. J.,2002
3. Evaluation of noise parameter extraction methods
4. Thermal Agitation of Electricity in Conductors
5. Wave approach for noise modeling of gallium nitride high electron-mobility transistors;Đorđević;Int. J. Numer. Model.: Electron. Netw., Devices Fields
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献