Formation of Thick High-Aspect-Ratio Resistive Masks by the Contact Photolithography Method-Reference-Cited by-同舟云学术

Formation of Thick High-Aspect-Ratio Resistive Masks by the Contact Photolithography Method

Published:2018-03 Issue:2 Volume:54 Page:127-134
ISSN:8756-6990
Container-title:Optoelectronics, Instrumentation and Data Processing
language:en
Short-container-title:Optoelectron.Instrument.Proc.

Author:

Gentselev A. N.,Dul’tsev F. N.,Kondrat’ev V. I.,Lemzyakov A. G.

Publisher

Allerton Press

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation

Link

http://link.springer.com/content/pdf/10.3103/S8756699018020024.pdf

Reference18 articles.

1. K. A. Valiev, Physics of Submicron Lithography (Nauka, Moscow, 1990) [in Russian].

2. W. M. Moreau, Semiconductor Lithography, Principles, Practices, and Materials (Plenum Press, New York, 1988).

3. S. B. Li, “Review of Publications on the LIGA Process,” Preprint No. 90-125 (Inst. Nuclear Phys., Sib. Branch, Acad. of Sci. of the USSR, Novosibirsk, 1990).

4. E. F. Reznikova, J. Morh, and H. Hein, “Deep Photo-Lithography Characterization of SU-8 Resist Layers,” Microsystem Technol. 11 (4–5), 282–291 (2015).

5. O. N. Bobrovnikova, A. N. Gentselev, B. G. Goldenberg, et al., “Formation and Investigation of Thick Resistive Layers of PMMA for the LIGA Technology,” Poverkhnost. Rentgen., Sinkhrotron., Neitron. Issled., No. 9, 38–43 (2005).

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