Transmission Electron Microscopy Sample Preparation of Ge2Sb2Te5 Nanowire Using Electron Beam
Author:
Affiliation:
1. Yonsei Institute of Convergence Technology, Yonsei University, Incheon 21983, Korea
2. School of Integrated Technology, Yonsei University, Incheon 21983, Korea
Funder
Ministry of Science ICT and Future Planning(MSIP)
Publisher
Korean Society of Electron Microscopy
Link
http://pdf.medrang.co.kr/KJM/2015/045/KJM045-04-03.pdf
Reference9 articles.
1. Techniques for Consecutive TEM and Atom Probe Tomography Analysis of Nanowires
2. Synthesis and Characterization of Ge2Sb2Te5 Nanowires with Memory Switching Effect
3. Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases
4. Highly scalable non-volatile and ultra-low-power phase-change nanowire memory
5. TEM Sample Preparation and FIB-Induced Damage
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