Design and Analysis of Static Characteristics of VCSEL at 1160 nm for Optical Interconnects-Reference-Cited by-同舟云学术

Design and Analysis of Static Characteristics of VCSEL at 1160 nm for Optical Interconnects

Published:2019-05-15 Issue:0 Volume:0 Page:
ISSN:2191-6322
Container-title:Journal of Optical Communications
language:en
Short-container-title:

Author:

Goyal Priyanka¹,Kaur Gurjit²

Affiliation:

1. Department of Electronics and Communication Engineering , Gautam Buddha University , Greater Noida , India

2. Department of Electronics and Communication Engineering , Delhi Technological University , Delhi , India

Abstract

Abstract VCSEL can be used as the transmitter for optical interconnect applications especially for short reach communication. In this research paper, we proposed a VCSEL structure design which can generate the wavelength of 1160 nm. The VCSEL structure is proposed with the aim of small aperture diameter because for optical interconnects applications the size should reduce. Two distributed Bragg reflectors (DBR), i. e. top DBR and bottom DBR are used to confine the active cavity area and InGaAsP/InP material is used for the formation of active cavity region. Then, the performance of the proposed VCSEL is evaluated at various oxide aperture diameters in the range 2–7 µm for anode voltage, anode current and total power emitted is also calculated to achieve optimized performance.

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

https://www.degruyter.com/document/doi/10.1515/joc-2019-0043/pdf

Reference4 articles.

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