An E-band Variable Gain Amplifier with 24 dB-control range and 80 to 100 GHz 1 dB bandwidth in SiGe BiCMOS technology
Author:
Affiliation:
1. Department of Information Engineering, Electronics, Telecommunications , Sapienza University of Rome , Rome , Italy
Abstract
Publisher
Walter de Gruyter GmbH
Subject
Electrical and Electronic Engineering
Link
https://www.degruyter.com/document/doi/10.1515/freq-2020-0123/pdf
Reference12 articles.
1. R. Levinger, R. B. Yishay, O. Katz, et al.., “High-performance E-band transceiver chipset for point-to-point communication in SiGe BiCMOS technology,” IEEE Trans. Microw. Theor. Tech., vol. 64, no. 4, pp. 1078–1087, 2016, https://doi.org/10.1109/tmtt.2016.2528981.
2. C. H. Li, W. T. Hsieh, and T. Y. Chiu, “A flip-chip-assembled W-band receiver in 90-nm CMOS and IPD technologies,” IEEE Trans. Microw. Theor. Tech., vol. 67, no. 4, pp. 1628–1639, 2019, https://doi.org/10.1109/tmtt.2019.2894426.
3. D. del Rio, I. Gurutzeaga, A. Rezola, et al.., “A wideband and high-linearity E-band transmitter integrated in a 55-nm SiGe technology for backhaul point-to-point 10-Gb/s links,” IEEE Trans. Microw. Theor. Tech., vol. 65, no. 8, pp. 2990–3001, 2017, https://doi.org/10.1109/tmtt.2017.2664833.
4. M. Gavell, S. E. Gunnarsson, I. Angelov, Z. S. He, M. Ferndahl, and H. Zirath, “Design and analysis of a wideband Gilbert cell VGA in 0.25-μm InP DHBT technology with DC-40-GHz frequency response,” IEEE Trans. Microw. Theor. Tech., vol. 65, no. 10, pp. 3962–3974, 2017, https://doi.org/10.1109/tmtt.2017.2693146.
5. A. Tessmann, A. Leuther, H. Massler, et al.., “A millimeter-wave low-noise amplifier MMIC with integrated power detector and gain control functionality,” in 2016 IEEE MTT-S International Microwave Symposium, 2016.
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1. Characterization-oriented design of E-band Variable-Gain Amplifiers in BiCMOS technology;2022 Microwave Mediterranean Symposium (MMS);2022-05-09
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