High speed operation efficiency of doped light sources with the silica-doped fiber channel for extended optical fiber system reach-Reference-Cited by-同舟云学术

High speed operation efficiency of doped light sources with the silica-doped fiber channel for extended optical fiber system reach

Published:2024-07-29 Issue: Volume: Page:
ISSN:0173-4911
Container-title:Journal of Optical Communications
language:en
Short-container-title:

Author:

Gopalan Anitha¹,Thillaigovindan Annalakshmi²,Patnala Pattabhirama Mohan³,Lesley Hubert Mary⁴,Sundaram Murugeswari⁵,Srinivasan Vimala⁶,Anwer Karem Tarek⁷

Affiliation:

1. Department of ECE, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences, SIMATS , Saveetha University , Chennai , Tamil Nadu , India

2. Department of ECE , S. A. Engineering College , Chennai , Tamil Nadu , India

3. Department of Information Technology , Aditya University , Kakinada , Andhra Pradesh , India

4. Department of ECE , Jeppiaar Institute of Technology , Chennai , Tamil Nadu , India

5. Department of ECE , Vel Tech Rangarajan Dr. Sagunthala R&D Institute of Science and Technology , Chennai , Tamil Nadu , India

6. Department of AI & DS , Panimalar Engineering College , Chennai , Tamil Nadu , India

7. Fayoum Institute of Technology , Fayoum , Egypt

Abstract

Abstract This paper demonstrated the high speed operation efficiency of doped light sources with the silica-doped fiber channel for extended optical fiber system reach. The output power and required bias voltage are clarified of AlIn(x)Ga(y)As light source versus injection current variations and indium, gallium dopants concentration variations at room temperature and 1.55 μm wavelength. The output power and required bias voltage are studied of PAl(z)Ge(h)Sb light source versus injection current variations and aluminum, germanium dopants concentration variations at room temperature and 1.55 μm wavelength. Required resonance frequency is measured for AlIn(x)Ga(y)As light source versus injection current variations and indium, gallium dopants concentration variations at room temperature and 1.55 μm wavelength. Required resonance frequency is demonstrated for PAl(z)Ge(h)Sb light source versus injection current variations and aluminum, germanium dopants concentration variations at room temperature and 1.55 μm wavelength.

Publisher

Walter de Gruyter GmbH

Link

https://www.degruyter.com/document/doi/10.1515/joc-2024-0130/pdf

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