Influence of Doping on the Crystal Potential of Silicon investigated by the Convergent Beam Electron Diffraction Technique

Abstract

Abstract Low index structure potentials of silicon were determined by convergent beam electron diffraction (Kossel-Möllenstedt technique) from very small crystal areas of about 100 Å in diameter. The values of 111, 222, 220, 113 and 004, determined to an accuracy of ±0.03 volts, are in excellent agreement with the accurate X-ray results of Aldred and Hart (see [6], p. 239). Heavy arsenic or phosphorous doping was found to cause a shift of 0.15 volts in the 111 structure potential. Absorption potentials were also determined and found to be 1/3 of the theoretical values published by Radi [20].