Affiliation:
1. The Institute of Science, Mayo Road, Bombay 1, India
Abstract
Oxides of copper formed at a temperature of 410° C and at pressures between 0.5 and 75 mm of Hg have been studied. At these low pressures we get only one oxide namely Cu2O. The increase of pressure and the time of oxidation appear mainly to produce a change in the orientation of the Cu2O crystallites. The films when sufficiently thick peal off, but even at this stage of thickness (1 μ to 3 μ) they do not show any electrical resistance or rectification.
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics
Cited by
8 articles.
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