Electroluminescence in plasmonic actuator based on Au/SiO2/n-Si tunnel junction
Author:
Liu Yan1ORCID, Chua Soo-Jin12, Gao Siping1, Hu Wenrui1, Guo Yongxin1
Affiliation:
1. Department of Electrical and Computer Engineering , 4 Engineering Drive 3 , National University of Singapore , Singapore 117576 , Singapore 2. LEES Program , Singapore-MIT Alliance for Research & Technology (SMART) , Singapore 138602 , Singapore
Abstract
Abstract
A compact electrical source capable of generating surface plasmon polaritons would represent a crucial step for on-chip plasmonic circuitry. The device fabrication of plasmonic actuator based on Au/SiO2/n++Si tunnel junction and performance have been reported in [ACS photonics, 2021, 8, 7, 1951–1960]. This work focuses on the underlying mechanisms of electroluminescence. The n-type Si samples were doped with concentrations ranging from 1.6 × 1015 cm−3 to 1.0 × 1020 cm−3. A low voltage of 1.4 V for intense light emission was achieved at the highest concentration. The electrical/spectral characteristics and energy band diagrams calculation show two distinct behaviors indicating two distinct mechanisms of light emission are at work in the heavily doped versus the lightly doped Si. In the heavily doped case, the light output is correlated to tunneling current and the subsequent conversion of surface plasmons to photons, while that for the lightly doped case is due to indirect band-to-band recombination in silicon. The results are validated by numerical simulation which indicates that the heavy doping of the n++-Si is necessary to achieve surface plasmon generation via electron tunneling due to the presence of band tail states and their effect on lowering the barrier height.
Publisher
Walter de Gruyter GmbH
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology
Reference44 articles.
1. R. J. Martin-Palma and J. M. Martinez-Duart, Nanotechnology for Microelectronics and Photonics, 2nd ed., Kidlington, UK, Elsevier, 2017, ISBN 978-0-323-46176-4. 2. W. Du, T. Wang, H.-S. Chu, and C. A. Nijhuis, “Highly efficient on-chip direct electronic–plasmonic transducers,” Nat. Photonics, vol. 11, no. 10, pp. 623–627, 2017. https://doi.org/10.1038/s41566-017-0003-5. 3. H. Qian, S.-W. Hsu, K. Gurunatha, et al.., “Efficient light generation from enhanced inelastic electron tunneling,” Nat. Photonics, vol. 12, pp. 485–488, 2018. https://doi.org/10.1038/s41566-018-0216-2. 4. X. B. He, J. B. Tang, H. T. Hu, et al.., “Electrically driven highly tunable cavity plasmons,” ACS Photonics, vol. 6, no. 4, pp. 823–829, 2019. https://doi.org/10.1021/acsphotonics.8b01620. 5. E. Ho-Seok, Y.-S. No, J. Kim, H.-G. Park, and M.-K. Seo, “Long-range surface plasmon polariton detection with a graphene photodetector,” Opt. Lett., vol. 43, no. 12, pp. 2889–2892, 2018. https://doi.org/10.1364/OL.43.002889.
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