Improved temperature model of AlGaN/GaN HEMT and device characteristics at variant temperature
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207210701791184
Reference23 articles.
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3. Anwar, AFM. July 1988.“On Modeling of Quantum Devices”, July, 2–102. NY: Clarkson University.
4. Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator
5. An analytic model for high-electron-mobility transistors
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