The effect of series resistance on calculation of the interface state density distribution in Schottky diodes
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207210110044396
Reference19 articles.
1. Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer
2. Interfacial states spectrum of a metal-silicon junction
3. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
4. Capacitance technique for the determination of interface state density of metal-semiconductor contact
5. Study of metal-semiconductor interface states using Schottky capacitance spectroscopy
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