Characterization of radiative recombination in amorphous silicon by optically detected magnetic resonance: Part II
Author:
Affiliation:
1. a Department of Physics , University of Hull , Hull , England
2. b Department of Physics , University of Sheffield , Sheffield , England
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418638208224024
Reference8 articles.
1. Spin dependent luminescence in hydrogenated amorphous silicon
2. Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductors
3. Time-resolved ODMR in a-Si:H by frequency response spectroscopy (FRS)
4. Characterization of radiative recombination in amorphous silicon by optically detected magnetic resonance: Part I
5. On the role of the dangling bond as a radiative centre in a-Si:H
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1. Modulation frequency dependence of continuous-wave optically/electrically detected magnetic resonance;Physical Review B;2012-09-07
2. Magnetic resonance measurements in hydrogenated amorphous silicon;Solar Energy Materials and Solar Cells;2003-07
3. Optically Detected Magnetic Resonance Studies of Undoped a-Si:H;MRS Proceedings;1996
4. Optically detected ESR studies of recombination processes in a-Si:H;Journal of Non-Crystalline Solids;1995-10
5. Role of dangling bond centers on radiative recombination processes in porous silicon;Applied Physics Letters;1995-09-04
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