The structure of kinks on the 90° partial in silicon and a ‘strained-bond model’ for dislocation motion
Author:
Affiliation:
1. a Department of Theoretical Physics , University of Umeå, Umeå , S-901 87 , Sweden
2. b Department of Physics , University of Exeter , Exeter, England.
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418638008227280
Reference20 articles.
1. Chemical Influence of Holes and Electrons on Dislocation Velocity in Semiconductors
2. Dissociation of near-screw dislocations in germanium and silicon
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