Carrier scattering by ionized impurities with non-linear screening charge in semiconductors
Author:
Affiliation:
1. a Max-Planck-Institut für Festkörperforschung , 7000 , Stuttgart 80 , F. R. Germany
2. b Institute of Radio Physics and Electronics, University of Calcutta , India
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418638108225809
Reference7 articles.
1. Note on ionized impurity scattering in solids
2. A Phase Shift Analysis of the Scattering of Carriers by Ionised Impurities in Non-Degenerate Semiconductors
3. Variational principles for solving nonlinear Poisson equations for the potential of impurity ions in semiconductors
4. Numerical solution to the nonlinear Poisson's equation including a spatially variable dielectric constant
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1. Electron mobility of heavily doped semiconductors including multiple scattering by ionized impurities;Journal of Applied Physics;2023-08-15
2. Effect of the energy-dependent effective mass on ionized-impurity-scattering-limited mobility in gallium arsenide;Physical Review B;1991-09-15
3. Effect of valence dielectric screening on ionized-impurity scattering in semiconductors;Physical Review B;1985-03-15
4. Electron scattering by ionized impurities in semiconductors;Reviews of Modern Physics;1981-10-01
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