Numerical Simulation of GaAs/AlGaAs Heterojunctions Including Interface States and Thermionic Emission-Reference-Cited by-同舟云学术

Numerical Simulation of GaAs/AlGaAs Heterojunctions Including Interface States and Thermionic Emission

Published:2003-01 Issue:2 Volume:23 Page:103-108
ISSN:0228-6203
Container-title:International Journal of Modelling and Simulation
language:en
Short-container-title:International Journal of Modelling and Simulation

Author:

Debbar N.¹,Al-Mashary B.¹

Affiliation:

1. Electrical Engineering Department, College of Engineering, P.O. Box 800, King Saud University, Riyadh 11421, Saudi Arabia; e-mail: {,}

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Mechanics of Materials,Modeling and Simulation,Software

Link

https://www.tandfonline.com/doi/pdf/10.1080/02286203.2003.11442260

Reference20 articles.

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2. A. Schüppen, A. Gruhle, H. Kibbel, U. Erben, & U. Konig, SiGe-HBT's with highftat moderate current densities,Electronics Letters, 30(14), 1994, 1187–1188.

3. T. Ishibashi, H. Nakajima, H. Ito, S. Yamahata, & Y. Matsuoka, Suppressed base-widening in AlGaAs⁄GaAs ballistic collection transistors, Paper presented atIEEE 48th Device Research Conf. (DRC), 1990.

4. M. Lundstrom & R. Schuelke, Numerical analysis of heterostructure devices,IEEE Transactions on Electron Devices, 30, 1983, 1151-1159.

5. M. Lundstrom, Boundary conditions for p-N heteroj unctions,Solid State Electronics, 27(b), 1984, 491–496.

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