Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of an InGaAlP Compound Semiconductor System-Reference-Cited by-同舟云学术

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Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of an InGaAlP Compound Semiconductor System

Published:1998-12 Issue:4 Volume:23 Page:323-396
ISSN:1040-8436
Container-title:Critical Reviews in Solid State and Materials Sciences
language:en
Short-container-title:Critical Reviews in Solid State and Materials Sciences

Author:

Hong J.,Lambers E. S.,Abernathy C. R.,Pearton S. J.,Shul R. J.,Hobson W. S.

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,General Chemical Engineering,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/10408439891324202

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective dry etching of InGaP over GaAs in inductively coupled plasmas;Journal of Electronic Materials;2000-05

2. High selectivity Inductively Coupled Plasma etching of GaAs over InGaP;Applied Surface Science;2000-02

3. Inductively coupled plasma etching in ICl- and IBr-based chemistries. Part I: GaAs, GaSb, and AlGaAs;Plasma Chemistry and Plasma Processing;2000

4. Selective dry etching using inductively coupled plasmas;Applied Surface Science;1999-05

5. GaAs∕InGaP Selective Etching in BCl[sub 3]∕SF[sub 6] High-Density Plasmas;Electrochemical and Solid-State Letters;1999

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