LOW TEMPERATURE DEPOSITION OF Pb(Zr,Ti)O3 THIN FILMS BY LIQUID DELIVERY MOCVD USING A COCKTAIL SOURCE WITH Pb(DMAMP)2, Zr(MMP)4 AND Ti(MMP)4-Reference-Cited by-同舟云学术

LOW TEMPERATURE DEPOSITION OF Pb(Zr,Ti)O3 THIN FILMS BY LIQUID DELIVERY MOCVD USING A COCKTAIL SOURCE WITH Pb(DMAMP)2, Zr(MMP)4 AND Ti(MMP)4

Published:2006-08-17 Issue:1 Volume:81 Page:261-270
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

OTANI YOHEI¹,UCHIYAMA KIYOSHI¹,OKAMURA SOICHIRO²,SHIOSAKI TADASHI¹

Affiliation:

1. a Graduate School of Materials Science , Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho , Ikoma, 630-0192, Nara, Japan

2. b Department of Applied Physics , Tokyo University of Science , 1-3 Kagurazaka, Tokyo, 162-8601, Shinjuka-Ku, Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580600663326

Reference13 articles.

1. The International Technology Roadmap For Semiconductors 2003 Front End Process 55

2. Liquid Delivery Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3Thin Films for High-Density Ferroelectric Random Access Memory Application

3. Preparation of Pb(Zr,Ti)O3 thin films by metalorganic chemical vapor deposition for low voltage ferroelectric memory

4. Metallorganic CVD of High-Quality PZT Thin Films at Low Temperature with New Zr and Ti Precursors Having MMP Ligands

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