Structure property relations of BST thin films-Reference-Cited by-同舟云学术

Structure property relations of BST thin films

Published:2001-01 Issue:1-4 Volume:38 Page:211-220
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Fitsilis F.¹,Regnery S.¹²,Ehrhart P.¹,Waser R.¹,Schienle F.²,Schumacher M.²,Juergensen H.²

Affiliation:

1. a Institut für Festkörperforschung, Forschungszentrum Jülich GmbH , D-52425, Jülich, Germany

2. b AIXTRON AG, Kackertstr. 15–17 , D-52072, Aachen, Germany

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580108016934

Reference11 articles.

1. High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories

2. Deposition Characteristics of(Ba,Sr)TiO3Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures

3. Microstructure Control of (Ba, Sr)TiO3 Films for Gigabit Dram

4. Chemical Vapor Deposition Technology of (Ba,Sr)TiO3 Thin Films for Gbit-Scale Dynamic Random Access Memories

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1. Characteristics of BST Capacitors with Aluminum Electrode and Iridium Oxide Barrier Layers;MRS Proceedings;2007

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