Property improvement of srbi2ta2o9 thin films prepared at 600°c by pulse-mocvd-Reference-Cited by-同舟云学术

Property improvement of srbi2ta2o9 thin films prepared at 600°c by pulse-mocvd

Published:2001-01 Issue:1-4 Volume:36 Page:103-110
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Funakubo Hiroshi¹,Mitsuya Masatoshi¹,Watanabe Takayuki¹,Nukaga Norimasa¹

Affiliation:

1. a Department of Innovative and Engineered Materials , Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology , 4259 Nagatsuta-cho, Midori-ku, Yokohama, 226-8502, JAPAN

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580108015532

Reference8 articles.

1. Fatigue-free ferroelectric capacitors with platinum electrodes

2. Direct Preparation of Crystalline SrBi2(Ta1-xNbx)2O9 Thin Films by Thermal Metalorganic Chemical Vapor Deposition at Low Temperature

3. Improvement of Property of Pb(ZrxTi1-x)O3 Thin Film Prepared by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition

4. Preparation and Characterization of SrBi2(Ta1-xNbx)2O9 Thin Films by Metalorganic Chemical Vapor Deposition from Two Organometallic Source Bottles

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystal structure and Polarization properties of ferroelectric Bi4-xLaxTi3O12 single crystals;Journal of the Korean Physical Society;2009-08-14

2. Fatigue-free La-modified PbTiO3 thin films prepared by pulsed-laser deposition on Pt/Ti/SiO2/Si substrates;Applied Physics Letters;2003-03-03