Heterojunction semiconductor g-C3N4/BiVO4 with an enhanced photocatalytic activity based on the effective chemical bonding-Reference-Cited by-同舟云学术

Heterojunction semiconductor g-C3N4/BiVO4 with an enhanced photocatalytic activity based on the effective chemical bonding

Published:2019-07-14 Issue:14 Volume:34 Page:827-837
ISSN:1066-7857
Container-title:Materials Technology
language:en
Short-container-title:Materials Technology

Author:

Tu Xinman¹,Zhou Rentao¹,Guo Huiling¹,Tao Wenyan¹

Affiliation:

1. Key Laboratory of Jiangxi Province for Persistent Pollutants control and Resources Recycle, College of Environmental and Chemical Engineering, Nanchang Hangkong University, Nanchang, China

Funder

National Natural Science Foundation of China

Cultivating Program for Young Scientists of Jiangxi Province of China

Natural Science Foundation of Jiangxi Province of China

Doctroal Start-up Fundation of Nanchang Hangkong University

Program for New Century Excellent Talents in University

Publisher

Informa UK Limited

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/10667857.2019.1638637

Reference42 articles.

1. Monoclinic Structured BiVO4 Nanosheets: Hydrothermal Preparation, Formation Mechanism, and Coloristic and Photocatalytic Properties

2. BiVO4–graphene catalyst and its high photocatalytic performance under visible light irradiation

3. Synthesis, growth mechanism and photoelectrochemical properties of BiVO4microcrystal electrodes

4. Synthesis of bismuth vanadate nanoplates with exposed {001} facets and enhanced visible-light photocatalytic properties

5. Near-Complete Suppression of Surface Recombination in Solar Photoelectrolysis by “Co-Pi” Catalyst-Modified W:BiVO4

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