Heat treatment of ion implanted GaAs-Reference-Cited by-同舟云学术

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Heat treatment of ion implanted GaAs

Published:1974-01 Issue:4 Volume:22 Page:253-258
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Bell E. C.,Glaccum A. E.,Hemment P. L. F.,Sealy B. J.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420157408230802

Reference20 articles.

1. Radiation Effects in GaAs

2. Goldsmith, N. and Kern, W. March 1967.RCA ReviewMarch, 153

3. Sunnyvale, Calif: Huahle Industries Inc. Minipak VIII 94086

4. Electrical and structure sensitive measurements on ion implanted GaAs

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1. Silicon Nitride in Compound Semiconductor Field Effect Transistors;Si Silicon;1991

2. Transmission Electron Microscopic Observation of Microdefects in Zn+-Implanted GaAs;Japanese Journal of Applied Physics;1985-10-20

3. Interfacial studies of deposited thin films of refractory metals on gallium arsenide substrates. Mo–GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1983

4. Characterisation of Se implanted layers for GaAs FETs;Microelectronics Reliability;1983-01

5. Isoelectronic traps in GaAs0.6P0.4by nitrogen implantation and CO2‐laser annealing;Applied Physics Letters;1979-11

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