Structure and orientation of As precipitates in GaAs grown at low temperature by molecular beam epitaxy-Reference-Cited by-同舟云学术

Structure and orientation of As precipitates in GaAs grown at low temperature by molecular beam epitaxy

Published:1992-04 Issue:4 Volume:65 Page:981-1002
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Claverie Alain,Liliental-Weber Zuzanna

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/01418619208205601

Reference17 articles.

1. Cahn, J. W. and Kalonji, G. 1982.Proc. Int. Conf. on Solid-Solid Phase Transf., Met. Soc. of AIMEEdited by: Aaronson, H. I., Laughlin, D. E., Sekerka, R. F. and Wayman, C. M. 3Warrendale, PA

2. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures

3. Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures

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