Atomic structure of the interface of GaAs on vicinal Si(001)
Author:
Publisher
Informa UK Limited
Subject
Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/01418619308225360
Reference18 articles.
1. Graded‐thickness samples for molecular beam epitaxial growth studies of GaAs/Si heteroepitaxy
2. Initial stages of epitaxial growth of GaAs on (100) silicon
3. GaAs epitaxy and heteroepitaxy: A scanning tunneling microscopy study
4. Direct observation of atomic columns in semiconductors by HREM at 400 kV
5. The preparation of cross-section specimens for transmission electron microscopy
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2. Polarity of epitaxial layers and (1210)prismatic defects in GaN and AIN grown on the (0001)Sisurface of 6H-SiC;Philosophical Magazine A;1997-12
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4. Heteroepitaxial diamond films on silicon (001): Interface structure and crystallographic relations between film and substrate;Physical Review B;1995-08-15
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