Effect of pressure of vanadium nitride using XRD and DFT-Reference-Cited by-同舟云学术

Effect of pressure of vanadium nitride using XRD and DFT

Published:2023-01-02 Issue:1 Volume:43 Page:58-67
ISSN:0895-7959
Container-title:High Pressure Research
language:en
Short-container-title:High Pressure Research

Author:

Xiong Lun¹,Huang Lujun¹²,Liu Dujin¹,Ding Yingchun³,Zhang Junran⁴

Affiliation:

1. School of Intelligent Manufacturing, Sichuan Institute of Arts and Science, Dazhou, People’s Republic of China

2. Industrial Technology Institute of Intelligent Manufacturing, Dazhou, People’s Republic of China

3. College of Optoelectronics Engineering, Chengdu University of Information Technology, Chengdu, People’s Republic of China

4. Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, People’s Republic of China

Funder

Industrial Technology Institute of School of Intelligent Manufacturing of Sichuan University of Arts and Science, China

Chinese Academy of Sciences

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

https://www.tandfonline.com/doi/pdf/10.1080/08957959.2023.2191195

Reference21 articles.

1. Mechanochemical synthesis of vanadium nitride

2. Vanadium nitride as a novel thin film anode material for rechargeable lithium batteries

3. Study on the electrochemical behavior of vanadium nitride as a promising supercapacitor material

4. A room-temperature approach to boron nitride hollow spheres

5. Superconducting and normal-state properties of vanadium nitride

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