Irradiation effects in high-purity InSb

Author:

Myhra S.

Publisher

Informa UK Limited

Subject

General Engineering

Reference13 articles.

1. Aukerman, L. W. 1968.Semiconductors and Semimetals, Edited by: Williardson, R. K. and Beer, A. C. Vol. 4, 343New York: Academic Press.

2. III-V compound review

3. Lang, D. V. 1976. Proc. Intl. Conf. on Radiation Effects in Semiconductors. 1976, Dubrovnik. Edited by: Urli, N. B. and Corbett, J. W.

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1. Positron annihilation measurements in high energy alpha irradiated undoped indium antimonide;International Journal of Modern Physics B;2014-12-04

2. Lattice sites of ion implanted Li in indium antimonide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-03

3. Positron lifetime measurements in as-grown and electron irradiated InSb;Crystal Research and Technology;1988-03

4. Radiation damage in InSb single crystals by α-particle bombardment;Nuclear Instruments and Methods in Physics Research;1983-12

5. Radiation damage and recovery effects in p-type InSb;Radiation Effects;1981-01

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