Transmission energy loss of light channeled particles in thin silicon crystals

Author:

Mea G. Della,Drigo A. V.,Lo Russo S.,Mazzoldi P.,Bentini G. G.

Publisher

Informa UK Limited

Subject

General Engineering

Reference13 articles.

1. Channeling Effects in the Energy Loss of 3-11-MeV Protons in Silicon and Germanium Single Crystals

2. Channeling in Diamond-Type and Zinc-Blende Lattices: Comparative Effects in Channeling of Protons and Deuterons in Ge, GaAs, and Si

3. Clark, G. J., Morgan, D. V. and Poate, J. M. 1970.Atomic Collision Phenomena in Solids, Edited by: Palmer, D. W., Thompson, M. W. and Townsend, P. D. 388Amsterdam: North-Holland Publ. Co.

4. Energy Loss of H, D, andHe4Ions Channeled Through Thin single Crystals of Silicon

5. Williamson, C. F., Boujot, J. F. and Picard, J. 1966. Rapport CEA, R-3042

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1. Determination of the electronic energy loss of light ions in a silicon lattice by using the transmission ion channeling method;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-10

2. Impact-parameter dependent stopping powers for MeV He ions in Si crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-06

3. Experimental evidence for a discrete transition to channeling for 1.0-MeV protons in Si〈100〉;Physical Review A;1998-04-01

4. Nanometric Amorphization of Oxide Materials under Dense Electronic Excitation: Swift Heavy Ion Irradiations;Key Engineering Materials;1998-02

5. Electronic stopping power of 〈100〉 axial-channelled He ions in Si crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-12

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