Dechanneling of 5 MeV Protons from planar channels in silicon and its temperature dependence-Reference-Cited by-同舟云学术

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Dechanneling of 5 MeV Protons from planar channels in silicon and its temperature dependence

Published:1973-01 Issue:3-4 Volume:18 Page:171-180
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Altman M. R.,Feldman L. C.,Gibson W. M.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577308232118

Reference18 articles.

1. Channeling of MeV Projectiles in Tungsten and Silicon

2. Appleton, B. R., Feldman, L. C. and Brown, W. L. Proceedings of the International Conference on Solid State Physics Research with Accelerators. Edited by: Goland, A. N. pp.45 Brookhaven National Laboratory Report B.N.L. 50083 C52

3. Electronic and nuclear contributions to dechannelling

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Channeling energy loss and dechanneling of He along axial and planar directions of Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-01

2. Temperature characteristics of planar channelling in the case of various interplanar spacings;Physics Letters A;1982-06

3. Temperature dependence of planar channeling in transmission experiments;Nuclear Instruments and Methods;1976-01

4. Feeding-in and blocking processes of MeV protons transmitted through silicon single crystals;Nuclear Instruments and Methods;1976-01

5. Planar dechanneling studies in diamond type lattices;Nuclear Instruments and Methods;1976-01

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