Ion implantation in InAs and InSb-Reference-Cited by-同舟云学术

Ion implantation in InAs and InSb

Published:1970-01 Issue:1 Volume:6 Page:149-153
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

McNally P. J.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577008235058

Reference6 articles.

1. Mc Nally, P. J. and King, W. J. ‘Ion Implanted Mosaic Infrared Detectors’. Proceedings of the Sixteenth National IRIS. Vol. 13, April, pp.3543 NAVSOP-2315, No. 1

2. Smith, T. C. 1969.‘A Versatile Arc Source for Ion Implantation Systems’, Edited by: Marton, L. 177San Francisco Press. Record of the Tenth Symposium on Electron, Ion and Laser Beam Technology

3. STANDARD PROCEDURE FOR TESTING INFRARED DETECTORS AND FOR DESCRIBING THEIR PERFORMANCE

4. Ion implantation in semiconductors—Part I: Range distribution theory and experiments

5. Junction delineation by anodic oxidation in InSb (As, P)

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