Surface topography of etched GaAs surfaces
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207218608920816
Reference4 articles.
1. Stability of (100)GaAs surfaces in aqueous solutions
2. Characterisation of electromigration damage in current-stressed Al gates as used for GaAs MESFET
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Oxide formation during etching of gallium arsenide;Corrosion Science;2002-03
2. Surface technology and ESD protection: towards highly reliable GaAs microwave circuits;Semiconductor Science and Technology;1994-05-02
3. ESD-degradation mechanisms of GaAs microwave devices and device protection;Microelectronics Reliability;1993-07
4. Concepts of ultrastable metal contacts and their evaluation;Materials Science and Engineering: B;1993-06
5. The Study of Native Oxide on Chemically Etched GaAs (100) Surfaces;Journal of The Electrochemical Society;1992-11-01
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