The conduction band structure of Ga1−xAlxAs alloys from Hall mobility measurements at high pressures
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207218108901382
Reference36 articles.
1. 3-level conduction-band structure of GaAs from high-stress and high-field measurements
2. GaAs lower conduction-band minima: Ordering and properties
3. Optical Absorption due to Inter-Conduction-Minimum Transitions in Gallium Arsenide
4. Preparation and Properties of AlAs-GaAs Mixed Crystals
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A search for resonant states from deep levels in GaAs and AlGaAs: Evidence from hall effect studies under pressure;physica status solidi (b);1996-06-01
2. Direct evidence of intervalley scattering in liquid-phase epitaxyAlxGa1−xAs/GaAsheterostructures;Physical Review B;1985-04-15
3. Electrical Transport Properties of GaAs and Alas Mixed Crystals for Semiconductor Devices;IETE Journal of Research;1983-03
4. Scattering parameters from an analysis of the hall electron mobility in Ga1−xAlxAs alloys;Journal of Physics and Chemistry of Solids;1982-01
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